Low temperature Molecular Beam Epitaxial growth of GaAs on Ge(100)

This study compares GaAs films grown on on-axis Ge(100) substrates using Molecular Beam Epitaxy (MBE) with As<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> flux of 3.5 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">−6</sup> Torr and a V/III ratio of approximately 25. Two samples were grown: a single-layer film at 250°C and a double-stack layer grown at 250°C, and 500, °C with same deposition rates for all films. The resulting films exhibited poor morphology and high surface RMS. Anti-phase domains (APDs) were not observed.