Wide-Band ANN-based Modeling of Inductors for 0.1um GaAs pHEMT Process

A wide-band ANN-based inductor model up to 110GHz for 0.1um GaAs pHEMT technology is presented. Different with the traditional equivalent circuit structure, the proposed ANN model takes high-order parasitic effect into account, such as skin effect and coupling effect, which is significant in high-frequency applications. The proposed ANN model has the input layer of geometric dimensions of the inductor and the frequency, with S-parameters as the output layer. The relationship between inputs and outputs is described through nonlinear expressions training of the model. The model results demonstrate high accuracy in comparison with the EM simulation results across the 110GHz frequency range. By integrating into the PDK, the efficiency and accuracy of MMIC design can be significantly enhanced.