Deep Level Effects and Hot-Electron Reliability in Scaled GaN HEMTs
Carbon-related defects, introduced as doping or due to contamination during MOCVD growth, can induce dispersion effects and threshold voltage instability in GaN-based HEMTs. Back-barriers, consisting of wider bandgap materials, are adopted in order to separate channel electrons from C -doped buffers, and to reduce short-channel effects; however, trapping at GaN/back-barrier interface may still be present. Deep level effects in different ‘bufferless’ HEMTs technologies are discussed on the basis of case histories.
Authors
- Enrico Zanoni (ORCID: https://orcid.org/0000-0001-7349-9656)
- Manuel Fregolent (ORCID: https://orcid.org/0000-0003-0801-2260)
- Fabiana Rampazzo (ORCID: https://orcid.org/0000-0002-2418-4831)
- Matteo Meneghini (ORCID: https://orcid.org/0000-0003-2421-505X)
- Carlo De Santi (ORCID: https://orcid.org/0000-0001-6064-077X)
- Marco Saro (ORCID: https://orcid.org/0000-0002-0422-2300)
- Francesco De Pieri (ORCID: https://orcid.org/0009-0002-4498-3187)
- Andrea Carlotto
- Gaudenzio Meneghesso
Institutions
- University of Padua (IT)
Publication Details
- Published
- 2025-06-15
- DOI
- https://doi.org/10.1109/ims40360.2025.11103980
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26
Funders
- Office of Naval Research Global