Efficient SRAF Generation via Diffusion Models
In semiconductor manufacturing, optical proximity correction and sub-resolution assist features (SRAF) are critical techniques for achieving high-fidelity wafer images, especially as semiconductor device critical dimensions shrink. However, traditional SRAF generation methods often face challenges in scalability, adaptability, and efficiency. This paper introduces a novel method that uses a conditional generative diffusion model for SRAF generation to improve efficiency and flexibility. We treat the SRAF generation task as an image-to-image translation problem, converting the input layout to include optimal assist features. Experimental results show that our proposed approach achieves a 5.57× speed-up over commercial tools while maintaining comparable accuracy in terms of edge placement error and process variation band.
Authors
- Binwu Zhu (ORCID: https://orcid.org/0000-0001-8625-1502)
- Xiaoxiao Liang (ORCID: https://orcid.org/0000-0003-4691-3940)
- Yuzhe Ma (ORCID: https://orcid.org/0000-0002-3612-4182)
- Jiajun Deng (ORCID: https://orcid.org/0000-0001-9624-7451)
- Yang Luo (ORCID: https://orcid.org/0000-0003-3661-3047)
- Z. N. Gu
- Minjie Bi
Institutions
- Vi Technology (United States) (US)
Publication Details
- Published
- 2025-05-09
- DOI
- https://doi.org/10.1109/iseda65950.2025.11100384
- Primary Topic
- Cell Image Analysis Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China