A TSPC mm-Wave Frequency Divider with up to 50 GHz Input Frequency in 12 nm FinFET Bulk CMOS

This paper presents a digital frequency divider that utilizes two dynamic TSPC flip-flops for a division ratio of four. The circuit operates over a wide supply voltage range spanning from 0.4 V to 1.0 V and reaches operating frequencies of at least 50 GHz limited by measurement equipment. The circuit draws 560 μA from a 0.7 V supply and achieves a locking range of above 48 GHz with a fixed bias and supply voltage. The demonstrated divider circuit is fabricated in a 12 nm Bulk CMOS FinFET node and occupies a core area of only 2.7 μ<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, while achieving similar performance to RF frequency dividers fabricated in SOI process nodes. To the best of the authors' knowledge, the presented circuit is the first mm-wave frequency divider built in a FinFET process reaching an operating frequency of 50 GHz while having the smallest reported chip area consumption found in literature.

Authors

Institutions

Publication Details

Published
2025-06-15
DOI
https://doi.org/10.1109/ims40360.2025.11103938
Citations
1
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.73

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

A TSPC mm-Wave Frequency Divider with up to 50 GHz Input Frequency in 12 nm FinFET Bulk CMOS

Andre Engelmann, Norman Franchi, Albert-Marcel Schrotz, Robert Weigel et al.
1 citations
Radio Frequency Integrated Circuit Design
0.73
article

A TSPC mm-Wave Frequency Divider with up to 50 GHz Input Frequency in 12 nm FinFET Bulk CMOS

Andre Engelmann, Norman Franchi, Albert-Marcel Schrotz, Robert Weigel, Philip Hetterle, Florian Probst, Kai Scheller, Konstantin Vilyuk
article en
1 citations

Abstract

This paper presents a digital frequency divider that utilizes two dynamic TSPC flip-flops for a division ratio of four. The circuit operates over a wide supply voltage range spanning from 0.4 V to 1.0 V and reaches operating frequencies of at least 50 GHz limited by measurement equipment. The circuit draws 560 μA from a 0.7 V supply and achieves a locking range of above 48 GHz with a fixed bias and supply voltage. The demonstrated divider circuit is fabricated in a 12 nm Bulk CMOS FinFET node and occupies a core area of only 2.7 μ<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, while achieving similar performance to RF frequency dividers fabricated in SOI process nodes. To the best of the authors' knowledge, the presented circuit is the first mm-wave frequency divider built in a FinFET process reaching an operating frequency of 50 GHz while having the smallest reported chip area consumption found in literature.

Friedrich-Alexander-Universität Erlangen-Nürnberg (DE)
Deutsche Forschungsgemeinschaft
Affordable and clean energy
Openalex Percentile: Top 25%
Radio Frequency Integrated Circuit Design
0.73
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.