Enhanced SEM Image Denoising via U-Net Based GAN Using Multi-Die Single Frame Images
With the advancement of integrated circuit technology nodes, distortion occurs in pattern transfer inevitably caused by Optical Proximity Effect (OPE). Model-based OPC (MB-OPC) is the most commonly used solution in the industry. MB-OPC relies on an accurate lithography model to guide it. However, numerous challenges are in face when tuning a lithography model. Scanning Electronic Microscope (SEM) images—the most critical data for lithography model tend to be noisy. The current method of image denoising is frame averaging, but it’s time-consuming and affected by resist shrinkage, leading to inaccuracy model. Deep learning methods in previous study lack real and accurate SEM images. We collected reliable SEM images from a fab by overlying Multi die single frame images, and a UNet-based GAN model is designed for denoising. Experiment demonstrates that MSE, PSNR, and SSIM of our methods are at least 9.1%, 2.7% and 1.4% better than other methods. Moreover, our method outperforms other methods in preserving process metrics like line widths and contour accuracy, closely approximating the target images.
Authors
- Kun Ren (ORCID: https://orcid.org/0000-0002-2983-168X)
- Dawei Gao (ORCID: https://orcid.org/0009-0002-7786-1506)
- Yongyu Wu
- Yanjiang Li (ORCID: https://orcid.org/0000-0001-6767-4171)
- Z.-J. Mou (ORCID: https://orcid.org/0009-0002-4807-5813)
- Shibin Xu
Institutions
- Zhejiang Medicine (China) (CN)
- Zhejiang University of Technology (CN)
Publication Details
- Published
- 2025-05-09
- DOI
- https://doi.org/10.1109/iseda65950.2025.11101281
- Primary Topic
- Image and Signal Denoising Methods
- Type
- article
- Field-Weighted Citation Impact
- 0.00