First Demonstration of MMIC Low-Noise Amplifiers Operating at Ka-Band Realized With Enhancement-Mode Gallium Nitride HEMTs
In this contribution a first demonstrator of a Low-Noise Amplifier (LNA) employing an Enhancement-mode Gallium Nitride (GaN) High Electron Mobility Transistor in industrial-grade technology is given. The realized demonstrator MMIC features 20 dB gain and 1.5 dB Noise Figure in the 27 to 31 GHz bandwidth, targeting Ka-band SATCOM applications. A depletion-mode GaN LNA is realised in the same foundry run to comparatively assess the advantages and disadvantages of the E- and D-mode GaN LNA solutions. To the best of the Authors' knowledge this is the first example of a MMIC GaN LNA realized using an Enhancement-mode (normally-OFF) transistor.
Authors
- Antonio Serino (ORCID: https://orcid.org/0000-0003-4217-5872)
- Sergio Colangeli
- Vikrant Sharma (ORCID: https://orcid.org/0000-0002-2016-2491)
- Mohamed Salah Khenissa
- Patrick E. Longhi (ORCID: https://orcid.org/0000-0003-0923-5917)
- Ernesto Limiti (ORCID: https://orcid.org/0000-0003-4668-7461)
- P. Altuntas
- Julien Poulain
- P. Frijlink
- Walter Ciccognani (ORCID: https://orcid.org/0000-0002-8027-2449)
- Charles Edoua Kacou
Institutions
- ON Semiconductor (United States) (US)
- University of Rome Tor Vergata (IT)
Publication Details
- Published
- 2025-06-15
- DOI
- https://doi.org/10.1109/ims40360.2025.11103790
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Space Agency