A Sub-6 Ghz Ultra-Compact 69.8

This paper presents a compact sub- 6 GHz GaN Doherty power amplifier (DPA) with harmonic control for 5 G. Utilizing harmonic tuning up to the 3rd harmonic, both amplifiers achieve high efficiency at peak and 6-dB OPBO. Harmonic impedance and intrinsic waveforms are optimized for performance. At 5.8 GHz, the measured peak Pout and P 1 dB are 37.9 dBm and 32.8 dBm, with 69.8 % drain efficiency at peak Pout and 47.4 % at OPBO. Digital predistortion (DPD) enhances average Pout from 28.9 to 31.9 dBm while maintaining < 3.5% EVM for 256-QAM. The DPA occupies just <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$3.2 ~\text{mm}^{2}$</tex> using <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.25 \min \mu \mathrm{m}$</tex> GaN HEMT technology.

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Published
2025-06-15
DOI
https://doi.org/10.1109/ims40360.2025.11103991
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A Sub-6 Ghz Ultra-Compact 69.8

Shawn S. H. Hsu, Sih-Han Li, Jie Zhang
3 links
Radio Frequency Integrated Circuit Design
article

A Sub-6 Ghz Ultra-Compact 69.8

Shawn S. H. Hsu, Sih-Han Li, Jie Zhang
article en

Abstract

This paper presents a compact sub- 6 GHz GaN Doherty power amplifier (DPA) with harmonic control for 5 G. Utilizing harmonic tuning up to the 3rd harmonic, both amplifiers achieve high efficiency at peak and 6-dB OPBO. Harmonic impedance and intrinsic waveforms are optimized for performance. At 5.8 GHz, the measured peak Pout and P 1 dB are 37.9 dBm and 32.8 dBm, with 69.8 % drain efficiency at peak Pout and 47.4 % at OPBO. Digital predistortion (DPD) enhances average Pout from 28.9 to 31.9 dBm while maintaining < 3.5% EVM for 256-QAM. The DPA occupies just <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$3.2 ~\text{mm}^{2}$</tex> using <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.25 \min \mu \mathrm{m}$</tex> GaN HEMT technology.

National Tsing Hua University (TW), Industrial Technology Research Institute (TW)
Affordable and clean energy
Openalex Percentile: Top 81%
Radio Frequency Integrated Circuit Design
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