10 Watt CW Power Handling SPDT RF Switch Using E-Mode p-GaN Dual-Gate HEMT Technology

A compact size 10W continuous wave (CW) power handling single-pole-double-throw (SPDT) RF switch is demonstrated by using p-GaN gate E-mode GaN on Si HEMT technology. Compared to traditional depletion-mode GaN HEMT, this technology can be operated with single voltage supply. For power handling and operation frequency optimization, the multi-gate (single-, dual-, triple-gates) p-GaN gate RF switch HEMTs were first studied. Based on power handling capability and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathrm{R}_{\text{ON}}-\mathrm{C}_{\text{OFF}}$</tex> measured results, the dualgate RF switch HEMT was adopted to design a 10W CW SPDT RF switch and operation frequency up to 5G FR1 n77 band.