A 9-to-13.5 GHz 29.2-dBm-$P$<sub>SAT</sub> 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI

This paper presents an X-/Ku-band 8-way power amplifier (PA) utilizing extended cascode cores (ECCs) and output 4-to-1 folded transformers (FTs) to obtain highefficiency/linearity/power density. The ECC introduces a common-gate (CG) transistor with gate bias fixed on top of the conventional cascode, in combination with a well-designed drain voltage waveform distribution across the transistors, which provides a higher voltage gain/output impedance compared to stacked-FET designs. The 4-to-1 FT efficiently combines fourway ECCs with triple-coupled routing, offering low loss and wideband performance due to its high-order bandpass characteristics. Fabricated in SMIC 130-nm CMOS SOI technology, the PA achieves a 3-dB bandwidth from 9.0 to 13.5 GHz, a saturated output power of 29.2 dBm, and a peak poweradded efficiency of 44.4%. The core area is 0.697 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, corresponding to a 1193.3 mW/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> power density. The PA supports 64-QAM 250 MSym/s signal modulation with 23.5-dBm average output power, demonstrating an EVMrms/ACLR of below −25 dB/−31 dBc.

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Published
2025-06-15
DOI
https://doi.org/10.1109/ims40360.2025.11103931
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A 9-to-13.5 GHz 29.2-dBm-$P$SAT 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI

Yiting Zhang, Nengxu Zhu, Fanyi Meng
1 links
Radio Frequency Integrated Circuit Design
article

A 9-to-13.5 GHz 29.2-dBm-$P$SAT 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI

Yiting Zhang, Nengxu Zhu, Fanyi Meng
article en

Abstract

This paper presents an X-/Ku-band 8-way power amplifier (PA) utilizing extended cascode cores (ECCs) and output 4-to-1 folded transformers (FTs) to obtain highefficiency/linearity/power density. The ECC introduces a common-gate (CG) transistor with gate bias fixed on top of the conventional cascode, in combination with a well-designed drain voltage waveform distribution across the transistors, which provides a higher voltage gain/output impedance compared to stacked-FET designs. The 4-to-1 FT efficiently combines fourway ECCs with triple-coupled routing, offering low loss and wideband performance due to its high-order bandpass characteristics. Fabricated in SMIC 130-nm CMOS SOI technology, the PA achieves a 3-dB bandwidth from 9.0 to 13.5 GHz, a saturated output power of 29.2 dBm, and a peak poweradded efficiency of 44.4%. The core area is 0.697 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, corresponding to a 1193.3 mW/mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> power density. The PA supports 64-QAM 250 MSym/s signal modulation with 23.5-dBm average output power, demonstrating an EVMrms/ACLR of below −25 dB/−31 dBc.

Tianjin University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 81%
Radio Frequency Integrated Circuit Design
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A 9-to-13.5 GHz 29.2-dBm-$P$<sub>SAT</sub> 44.4%-PAE Power Amplifier Using Extended Cascode Cores and 4-to-1 Folded Transformers in 130-nm CMOS SOI — Yiting Zhang, Nengxu Zhu, et al. · (2025) | TGRS Research Map | TGRS