High-Power Quasi-Vertical Gan Schottky Barrier Diode RF Rectifier Based on Impedance Compression Network for WPT Applications

This paper introduces a high-power RF rectifier with excellent adaptability to load variation. The rectifier leverages GaN-integrated quasi-vertical Schottky barrier diodes as the core rectifying components designed for wireless power transfer applications. To address the input impedance fluctuations caused by variations in DC load, the rectifier is integrated into an impedance compression network structure using a quarter-wave impedance transformer. A newly developed diode with a high breakdown voltage of 160 V and an exceptional ideality factor of 1.02 further enhances the rectification performance, particularly at high input power levels. The proposed rectifier achieves a peak power conversion efficiency of 72.6% at 10 W with an efficiency greater than 50% across an input power range from 0.25 to 15.85 W. Additionally, it maintains over 50% efficiency within a DC load dynamic range from 50 to 1100Ω.