A High-Efficiency GaAs HBT Power Amplifier for 6G FR3 Applications
A two-stage, single-ended amplifier has been designed for 6G FR3 band handset application in a commercial 6-inch GaAs HBT process. At 12 GHz, the power stage of this amplifier achieves an output power of 32 dBm with power added efficiency (PAE) of 57.9% under 6.5 V operation. Using this HBT array of power stage to fabricate a two-stage amplifier, PAE can be further improved to 55% with a gain of 24 dB. Combining two two-stage PA by power combiner, the measured output power is 34.4 dBm with a gain of 24 dB and PAE of 50%, which is among the highest reported for GaAs HBT amplifiers under mobile handset operation voltage at this frequency.
Authors
- Tung-Yao Chou
- Chao‐Hsin Wu (ORCID: https://orcid.org/0000-0001-7849-773X)
- Shu-Hsiao Tsai
- Kun‐You Lin (ORCID: https://orcid.org/0000-0002-4308-3059)
- Keng-Li Hsu (ORCID: https://orcid.org/0000-0002-7472-0161)
- Jung-Tao Chung (ORCID: https://orcid.org/0009-0001-6171-0503)
- K.T. Feng (ORCID: https://orcid.org/0009-0002-4680-0604)
- Jyun-Hao Li
- Cheng-Kuo Lin
- Chung-Huai Chang
- Steve Hung‐Lung Tu
Institutions
- National Taiwan University (TW)
Publication Details
- Published
- 2025-06-15
- DOI
- https://doi.org/10.1109/ims40360.2025.11103828
- Citations
- 1
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.73