A V-Band OOK Transmitter with 14.5Gbps Data Rate and 11.1% DCto-RF Efficiency in 65nm CMOS

This paper presents an energy-efficient V-band onoff keying (OOK) transmitter (TX), which integrates a voltagecontrolled oscillator (VCO), a broadband passive modulator, and a broadband baseband amplifier (BBA). A power-oriented design methodology is used in the oscillator design for maximum output power. The passive modulator is a distributed single-pole singlethrow (SPST) structure consisting of a transmission line with two switches. The modulator achieves a modulation bandwidth of up to 30GHz, a high on-off ratio of more than 19dB, and an insertion loss of less than 3.6dB. Implemented in a 65nm LP CMOS process, the TX supports a data rate of 14.5 Gbps with a bit error rate (BER) less than 1×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup>. The maximum output power is 4.5dBm with a peak DC-to-RF efficiency of 11.1%, leading to a high figure-of-merit (FoM) value of 1.61.

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Published
2025-06-15
DOI
https://doi.org/10.1109/ims40360.2025.11104018
Citations
1
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
0.73
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article

A V-Band OOK Transmitter with 14.5Gbps Data Rate and 11.1% DCto-RF Efficiency in 65nm CMOS

Guangyin Feng, Zhe Yang, Chuang Hu, Junhong Liu et al.
1 citations
Radio Frequency Integrated Circuit Design
0.73
article

A V-Band OOK Transmitter with 14.5Gbps Data Rate and 11.1% DCto-RF Efficiency in 65nm CMOS

Guangyin Feng, Zhe Yang, Chuang Hu, Junhong Liu, Xiu Yin Zhang, Yi Wu, Shaoxian Li, R.P. Liu
article en
1 citations

Abstract

This paper presents an energy-efficient V-band onoff keying (OOK) transmitter (TX), which integrates a voltagecontrolled oscillator (VCO), a broadband passive modulator, and a broadband baseband amplifier (BBA). A power-oriented design methodology is used in the oscillator design for maximum output power. The passive modulator is a distributed single-pole singlethrow (SPST) structure consisting of a transmission line with two switches. The modulator achieves a modulation bandwidth of up to 30GHz, a high on-off ratio of more than 19dB, and an insertion loss of less than 3.6dB. Implemented in a 65nm LP CMOS process, the TX supports a data rate of 14.5 Gbps with a bit error rate (BER) less than 1×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-12</sup>. The maximum output power is 4.5dBm with a peak DC-to-RF efficiency of 11.1%, leading to a high figure-of-merit (FoM) value of 1.61.

Institute of Semiconductors (CN), South China University of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 25%
Radio Frequency Integrated Circuit Design
0.73
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