In-situ regenerative adduct assisted p-type doping of organic semiconductor

Organic semiconductors (OSCs) are leading materials for next-generation optoelectronic devices. Effective charge transport in devices often requires electronic doping of OSCs. Conventional methods using molecular dopants or metal salts often suffer from poor efficiency, undesirable side products, and require additives and prolonged incubation. We present in situ regenerative adduct-assisted (IRRA) doping, which is a rapid, metal-ion-free, and additive-free approach that enables clean and efficient doping of various OSCs. Spectroscopic analyses reveal a self-regenerating adduct as the active doping species. The simplicity of the doping method and the range of materials available open new avenues for the development of diverse p-doping strategies, providing a scalable and highly adaptable approach to doping hole-transporting layers for various types of optoelectronic devices, including halide perovskite solar cells.

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Journal
ChemRxiv
Published
2025-08-08
DOI
https://doi.org/10.26434/chemrxiv-2025-dcq9g
Primary Topic
Organic Electronics and Photovoltaics
Type
article
Field-Weighted Citation Impact
0.00

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article

In-situ regenerative adduct assisted p-type doping of organic semiconductor

Simantini Nayak, Pabitra K. Nayak, Vaishali Arunachalam, Shubham Gupta et al.
ChemRxiv
Organic Electronics and Photovoltaics
article

In-situ regenerative adduct assisted p-type doping of organic semiconductor

Simantini Nayak, Pabitra K. Nayak, Vaishali Arunachalam, Shubham Gupta, Arya Vidhan, Shaibal K. Sarkar, Brijesh Patel
article en

Abstract

Organic semiconductors (OSCs) are leading materials for next-generation optoelectronic devices. Effective charge transport in devices often requires electronic doping of OSCs. Conventional methods using molecular dopants or metal salts often suffer from poor efficiency, undesirable side products, and require additives and prolonged incubation. We present in situ regenerative adduct-assisted (IRRA) doping, which is a rapid, metal-ion-free, and additive-free approach that enables clean and efficient doping of various OSCs. Spectroscopic analyses reveal a self-regenerating adduct as the active doping species. The simplicity of the doping method and the range of materials available open new avenues for the development of diverse p-doping strategies, providing a scalable and highly adaptable approach to doping hole-transporting layers for various types of optoelectronic devices, including halide perovskite solar cells.

ChemRxiv
Tata Institute of Fundamental Research (IN), Institute of Materials, Minerals and Mining (GB), Indian Institute of Technology Bombay (IN), Institute of Minerals and Materials Technology (IN)
Princeton University, Tata Institute of Fundamental Research, Ministry of New and Renewable Energy India, Department of Science and Technology, Ministry of Science and Technology, India, Institute of Minerals and Materials Technology, Academy of Scientific and Innovative Research, Science and Engineering Research Board
Openalex Percentile: Top 81%
Organic Electronics and Photovoltaics
DOIOpen Access PDFOpenAlex
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In-situ regenerative adduct assisted p-type doping of organic semiconductor — Simantini Nayak, Pabitra K. Nayak, et al. · ChemRxiv (2025) | TGRS Research Map | TGRS