HC-PINN: A Hard-Constraint Enhanced PINN for Accurate Device-Level Thermal Simulation

In this work, a hard-constraint (HC) enhanced Physics-Informed Neural Network (PINN) framework for accurate device-level thermal simulations is developed, effectively addressing challenges such as complex boundary conditions, multi-material systems, and interface continuity constraints. The approach integrates the domain decomposition method and the mixed residual method (MIM) while enforcing boundary and interface conditions through a hard-constraint strategy, ensuring an improved simulation accuracy. The proposed enhanced PINN thermal simulation framework is verified through its application to advanced silicon-on-insulator (SOI) MOSFETs. Compared with conventional PINN and extended physics-informed neural networks (XPINN) methods, the approach achieves a 4.76× improvement in the MAPE of temperature predictions and significantly enhances the heat flux continuity at material interfaces, ensuring better adherence to physical laws. This work provides a scalable and high-fidelity solution for complex device-level thermal simulations and future semiconductor thermal evaluation and optimization.

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Publication Details

Published
2025-05-09
DOI
https://doi.org/10.1109/iseda65950.2025.11100944
Primary Topic
Model Reduction and Neural Networks
Type
article
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article

HC-PINN: A Hard-Constraint Enhanced PINN for Accurate Device-Level Thermal Simulation

Hao Wu, Yu Li, Lining Zhang, Sihao Chen et al.
Model Reduction and Neural Networks
article

HC-PINN: A Hard-Constraint Enhanced PINN for Accurate Device-Level Thermal Simulation

Hao Wu, Yu Li, Lining Zhang, Sihao Chen, Runsheng Wang
article en

Abstract

In this work, a hard-constraint (HC) enhanced Physics-Informed Neural Network (PINN) framework for accurate device-level thermal simulations is developed, effectively addressing challenges such as complex boundary conditions, multi-material systems, and interface continuity constraints. The approach integrates the domain decomposition method and the mixed residual method (MIM) while enforcing boundary and interface conditions through a hard-constraint strategy, ensuring an improved simulation accuracy. The proposed enhanced PINN thermal simulation framework is verified through its application to advanced silicon-on-insulator (SOI) MOSFETs. Compared with conventional PINN and extended physics-informed neural networks (XPINN) methods, the approach achieves a 4.76× improvement in the MAPE of temperature predictions and significantly enhances the heat flux continuity at material interfaces, ensuring better adherence to physical laws. This work provides a scalable and high-fidelity solution for complex device-level thermal simulations and future semiconductor thermal evaluation and optimization.

Peking University (CN)
Affordable and clean energy
Openalex Percentile: Top 84%
Model Reduction and Neural Networks
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HC-PINN: A Hard-Constraint Enhanced PINN for Accurate Device-Level Thermal Simulation — Hao Wu, Yu Li, et al. · (2025) | TGRS Research Map | TGRS