Co-Placement of I/O Pins and Cells with Multi-Electrostatics Modeling
Placement is a critical step in VLSI physical design. Traditionally, I/O pins are usually placed separately from the standard cell placement, which compromises solution quality. To address this challenge, this paper proposes a novel approach by treating I/O pins as cells and integrating them into the global placement process. The placement of I/O pins is constrained by a region, and to satisfy this constraint, they are required to be placed at the boundary. To address this challenge, a multi-electrostatics model is developed for the global placement of I/O pins and cells. Following the global placement, a two-stage legalization method is proposed to address the spacing of I/Os and the overlap of I/Os with cells, respectively. The experimental results demonstrate the efficacy of the proposed approach.
Authors
- Kexin Zhao
- Fuxing Huang (ORCID: https://orcid.org/0000-0002-7963-4289)
- Wenxing Zhu (ORCID: https://orcid.org/0000-0002-8698-0024)
Institutions
- Southeast University (CN)
- Fuzhou University (CN)
Publication Details
- Published
- 2025-05-09
- DOI
- https://doi.org/10.1109/iseda65950.2025.11101585
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Research and Development