Co-Placement of I/O Pins and Cells with Multi-Electrostatics Modeling

Placement is a critical step in VLSI physical design. Traditionally, I/O pins are usually placed separately from the standard cell placement, which compromises solution quality. To address this challenge, this paper proposes a novel approach by treating I/O pins as cells and integrating them into the global placement process. The placement of I/O pins is constrained by a region, and to satisfy this constraint, they are required to be placed at the boundary. To address this challenge, a multi-electrostatics model is developed for the global placement of I/O pins and cells. Following the global placement, a two-stage legalization method is proposed to address the spacing of I/Os and the overlap of I/Os with cells, respectively. The experimental results demonstrate the efficacy of the proposed approach.

Authors

Institutions

Publication Details

Published
2025-05-09
DOI
https://doi.org/10.1109/iseda65950.2025.11101585
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Co-Placement of I/O Pins and Cells with Multi-Electrostatics Modeling

Kexin Zhao, Fuxing Huang, Wenxing Zhu
Integrated Circuits and Semiconductor Failure Analysis
article

Co-Placement of I/O Pins and Cells with Multi-Electrostatics Modeling

Kexin Zhao, Fuxing Huang, Wenxing Zhu
article en

Abstract

Placement is a critical step in VLSI physical design. Traditionally, I/O pins are usually placed separately from the standard cell placement, which compromises solution quality. To address this challenge, this paper proposes a novel approach by treating I/O pins as cells and integrating them into the global placement process. The placement of I/O pins is constrained by a region, and to satisfy this constraint, they are required to be placed at the boundary. To address this challenge, a multi-electrostatics model is developed for the global placement of I/O pins and cells. Following the global placement, a two-stage legalization method is proposed to address the spacing of I/Os and the overlap of I/Os with cells, respectively. The experimental results demonstrate the efficacy of the proposed approach.

Southeast University (CN), Fuzhou University (CN)
National Natural Science Foundation of China, Research and Development
Openalex Percentile: Top 81%
Integrated Circuits and Semiconductor Failure Analysis
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.