Fe-NVSim: An Extended NVSim for Emerging FeFET-based Embeded Memory Simulation

Ferroelectric field effect transistors (FeFETs) exhibit significant potential in emerging non-volatile memory (NVM) applications. There is an increasing need to evaluate and explore the design space of FeFET-based memory. However, FeFET are not well supported in current simulation tools such as NVSim and DRAMsim3 due to the unique properties of FeFET. In this paper, we present a comprehensive implementation methods to estimate the area, energy consumption and latency of multiple FeFET memory cell to extend the functionality of the circuit-aware simulator NVSim. In addition, it enables the unique performance estimation of multi-level FeFET memory arrays and the memory window under different ferroelectric materials and ferroelectric layer structures. The effectiveness and reliability of Fe-NVSim have been simulated and discussed. Fe-NVSim is anticipated to facilitate FeFET memory circuit design.