Bright Light Emission from Deep Energy States

Deep energy states, a fundamental concept in semiconductor physics, play a pivotal role in determining the optical performance of semiconductor materials. They are generally regarded as undesirable defects, as they can serve as efficient centers for non-radiative recombination. Thus, the prevailing consensus is that deep energy states must be passivated and mitigated to enhance the optical properties of semiconductors. In this work, however, it is demonstrated that these " undesirable" deep energy states can be harnessed as " desirable" states to enable bright light emission. This is achieved by proposing a deep energy state regulation mechanism, termed "surface ionization annealing", which transforms the randomly and broadly distributed non-radiative deep energy levels into a narrower energy range. This transformation results in a high density of states and band-edge-like absorption originating from deep energy states in sulfur quantum dots. The regulation is realized through precise control of surface charge and surface dangling bonds. Simultaneously, surface ionization annealing eliminates non-radiative deep energy states, significantly enhancing the photoluminescence quantum yield (PLQY) of sulfur quantum dots to 15.6%. Consequently, the simultaneous realization of a high density of states and high PLQY enables bright light emission from deep energy states.

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Publication Details

Journal
Advanced Science
Published
2025-08-12
DOI
https://doi.org/10.1002/advs.202509549
Citations
1
Primary Topic
Dark Matter and Cosmic Phenomena
Type
article
Field-Weighted Citation Impact
1.87

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Bright Light Emission from Deep Energy States

Rui Duan, Handong Sun, Yi Huang, Sihang Liu et al.
1 citations
Advanced Science
Dark Matter and Cosmic Phenomena
1.87
article

Bright Light Emission from Deep Energy States

Rui Duan, Handong Sun, Yi Huang, Sihang Liu, Ming Da Lee, Zhigang Zheng, Van Duong Ta, Yong Yi, Yugang Zhao, Xuehong Zhou, Zhan Yu, Lian Xiao, Quanchao Du
article en
1 citations

Abstract

Deep energy states, a fundamental concept in semiconductor physics, play a pivotal role in determining the optical performance of semiconductor materials. They are generally regarded as undesirable defects, as they can serve as efficient centers for non-radiative recombination. Thus, the prevailing consensus is that deep energy states must be passivated and mitigated to enhance the optical properties of semiconductors. In this work, however, it is demonstrated that these " undesirable" deep energy states can be harnessed as " desirable" states to enable bright light emission. This is achieved by proposing a deep energy state regulation mechanism, termed "surface ionization annealing", which transforms the randomly and broadly distributed non-radiative deep energy levels into a narrower energy range. This transformation results in a high density of states and band-edge-like absorption originating from deep energy states in sulfur quantum dots. The regulation is realized through precise control of surface charge and surface dangling bonds. Simultaneously, surface ionization annealing eliminates non-radiative deep energy states, significantly enhancing the photoluminescence quantum yield (PLQY) of sulfur quantum dots to 15.6%. Consequently, the simultaneous realization of a high density of states and high PLQY enables bright light emission from deep energy states.

Advanced ScienceVol. 12(41)
Le Quy Don Technical University (VN), Ministry of Education of the People's Republic of China (CN), East China University of Science and Technology (CN), University of Shanghai for Science and Technology (CN), Nanyang Technological University (SG), Capital Medical University (CN), University of Macau (MO), Shanghai University of Electric Power (CN), Beijing Anzhen Hospital (CN), Beijing YouAn Hospital (CN), Beijing Obstetrics and Gynecology Hospital (CN), Beihang University (CN)
National Natural Science Foundation of China, Shanghai Municipal Education Commission, Fundo para o Desenvolvimento das Ciências e da Tecnologia, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 12%
Dark Matter and Cosmic Phenomena
1.87
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