Epitaxial Growth and Resistivity Characterization of Rhodium Thin Films for Advanced Interconnect Applications
In this study, we grew epitaxial Rh layers on two substrates, MgO(001) and STO(001). The effects of threading dislocations on the resistivity of the Rh epitaxial layers were demonstrated through a comparative analysis.
Authors
- Keun Wook Shin (ORCID: https://orcid.org/0000-0002-7454-7434)
- Gi-Young Jo
- Eunji Yang
- Jeong Yub Lee (ORCID: https://orcid.org/0000-0003-3222-2727)
Institutions
- Samsung (South Korea) (KR)
- Advanced Device Technology (United States) (US)
Publication Details
- Published
- 2025-06-02
- DOI
- https://doi.org/10.1109/iitc66087.2025.11075407
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00