Aluminum Nitride Interlayer Dielectric Integration for Effective Heat Dissipation of 3D-IC
To address the thermal challenges of three-dimensional integrated circuits, we explored the integration of aluminum nitride with high thermal conductivity as a novel interlayer dielectric in a back end of line process. After systematically examining potential challenges associated with introducing AlN—such as residual stress, copper diffusivity, adhesion—we successfully demonstrated Cu embedding by electroplating within trenches formed in an AlN layer.
Authors
- Eiji Komatsu (ORCID: https://orcid.org/0000-0001-9804-3196)
- M. Niwa (ORCID: https://orcid.org/0000-0002-4859-7016)
- Takeki Ninomiya (ORCID: https://orcid.org/0009-0008-0630-1353)
- Tadahiro Kuroda (ORCID: https://orcid.org/0000-0003-0617-1057)
- Satoshi Yoshida (ORCID: https://orcid.org/0000-0003-3165-7809)
- Takeshi Takagi
Institutions
- Shima Seiki (Japan) (JP)
- Systems Biology Institute (JP)
- Shinko Electric Industries (Japan) (JP)
- The University of Tokyo (JP)
Publication Details
- Published
- 2025-06-02
- DOI
- https://doi.org/10.1109/iitc66087.2025.11075452
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education