Process integration of High-Density Low-k dielectric material for enhanced plasma-induced damage-resistant performance

Selective barrier metal deposition was introduced to scale down the Cu barrier metal thickness, therefore reducing via resistance in back-end of line. Such an innovation, however, can cause plasma-induced damage to low-k dielectric, thereby degrading capacitance degradation in metal stack. We describe in this paper, process integration of high-density low-k dielectric material for enhanced plasma-induced damage-resistant performance, therefore maximizing the capacitance benefit of low-k dielectric material.