TaN Superconducting Line Integrability for Quantum Device on 300 mm Wafer
Tantalum nitride (TaN) is a promising material for superconducting quantum circuits due to its stability, robustness, and industry compatibility. Its deposition, etching process down to 150 nm line CD, and electrical evaluation are reported. A current density close to 50000 µA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> is reported in a 1 µm-long line presenting a CD of 150 nm. These results offer a promissing approach for quatum BEOL devices.
Authors
- T. Chevolleau (ORCID: https://orcid.org/0000-0001-5638-4443)
- Mathilde Bouvier (ORCID: https://orcid.org/0000-0003-0167-0746)
- F. Gustavo (ORCID: https://orcid.org/0009-0003-6148-8687)
- F. Nemouchi (ORCID: https://orcid.org/0000-0003-2258-0870)
- R. Segaud
- Patrice Gergaud (ORCID: https://orcid.org/0000-0003-2495-8144)
- J. Garrione
- F. Lefloch (ORCID: https://orcid.org/0009-0004-9071-4580)
- T. Chêne
- S. Minoret
Institutions
- Institut polytechnique de Grenoble (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- CEA Grenoble (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Published
- 2025-06-02
- DOI
- https://doi.org/10.1109/iitc66087.2025.11075418
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00