Deposition of Pinhole and Particle Free Subnanometer TiN Films in High Aspect Ratio Spaces
The increasing demand for high-bandwidth memory necessitates the development of three-dimensional architectures with high-aspect-ratio (HAR) features. Achieving uniform, particle-free thin film deposition in such structures is critical for device reliability. Particle and pinhole free 0.6 nm and 0.8 nm TiN ALD films were deposited utilizing TiCl<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> and N<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>H<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> in horizontal vias and 2000:1 high aspect ratio spaces. Confirmation of pinhole free deposition was done via TEM. Particle analysis was conducted in a 2000:1 aspect ratio thermally bonded chip.
Authors
- Andrew C. Kummel (ORCID: https://orcid.org/0000-0001-8301-9855)
- A. Ross (ORCID: https://orcid.org/0000-0002-3633-7540)
- Muhannad S. Bakir (ORCID: https://orcid.org/0000-0002-0380-0842)
- Willinton Y. Hernández (ORCID: https://orcid.org/0000-0002-7375-5530)
- Ping C. Lee
- Dipayan Pal (ORCID: https://orcid.org/0000-0003-0008-3259)
- Dohyun Go
- Danish A. Baig
- Jeffrey Spiegelman
- Diego Contreras Mora
Institutions
- Georgia Institute of Technology (US)
- Atlanta Technical College (US)
- University of California San Diego (US)
- Dairy Management (US)
Publication Details
- Published
- 2025-06-02
- DOI
- https://doi.org/10.1109/iitc66087.2025.11075450
- Primary Topic
- Metal and Thin Film Mechanics
- Type
- article
- Field-Weighted Citation Impact
- 0.00