A Multiscale Study on Interfacial Properties of Ru-doped TaN in Advanced Interconnects
There is an increasing demand of interconnect scaling to meet device performance and miniaturization. In this study, interfacial properties of Ru-doped TaN, known as a novel barrier material for advanced interconnects, is investigated on Ru doping effects and TaN thickness control. By employing atomistic and continuum simulations, we demonstrated that Ru doping improves adhesion with Cu and enhances mechanical properties at optimal thickness, indicating Ru-doped TaN as a potential candidate of advanced interconnect barrier materials.
Authors
- Rak-Hwan Kim
- Minyeong Je (ORCID: https://orcid.org/0000-0002-6994-2384)
- Seung‐Ki Baek (ORCID: https://orcid.org/0000-0001-8826-9036)
- Ji‐Hwan Lee (ORCID: https://orcid.org/0000-0002-6413-0221)
- Hyeon-Seok Do (ORCID: https://orcid.org/0000-0001-8803-3402)
- Dae Sin Kim
- Geun-Myeong Kim
- Youngsoo Kim (ORCID: https://orcid.org/0000-0001-6448-5519)
- Seungmin Lee (ORCID: https://orcid.org/0000-0003-2965-1205)
- Sunghwan Kim (ORCID: https://orcid.org/0000-0002-0102-9169)
- Yoon‐Suk Kim (ORCID: https://orcid.org/0000-0002-8253-3075)
- Eunji Jung (ORCID: https://orcid.org/0000-0002-6470-6059)
- Seungyong Yoo
Institutions
- Samsung (South Korea) (KR)
Publication Details
- Published
- 2025-06-02
- DOI
- https://doi.org/10.1109/iitc66087.2025.11075396
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.73