Engineered s-SWCNT network/a-Ga<sub>2</sub>O<sub>3</sub> heterointerface for enhanced deep ultraviolet photodetection

Spin-coated s-SWCNT/sputtered a-Ga 2 O 3 heterojunction boosts DUV responsivity by synergizing appropriate band alignment with nanotube transport pathways, offering a scalable optoelectronic design.

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Publication Details

Journal
Journal of Materials Chemistry A
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ta03615a
Citations
3
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
1.28

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article

Engineered s-SWCNT network/a-Ga2O3 heterointerface for enhanced deep ultraviolet photodetection

Dayong Jiang, Zhenwei Guo, Man Zhao, Haoming Wei et al.
3 citations
Journal of Materials Chemistry A
Ga2O3 and related materials
1.28
article

Engineered s-SWCNT network/a-Ga2O3 heterointerface for enhanced deep ultraviolet photodetection

Dayong Jiang, Zhenwei Guo, Man Zhao, Haoming Wei, Qiu-Yu Huang
article en
3 citations

Abstract

Spin-coated s-SWCNT/sputtered a-Ga 2 O 3 heterojunction boosts DUV responsivity by synergizing appropriate band alignment with nanotube transport pathways, offering a scalable optoelectronic design.

Journal of Materials Chemistry AVol. 13(31)
Changchun University of Science and Technology (CN), Central South University (CN)
National Natural Science Foundation of China, Key Research and Development Program of Hunan Province of China, Outstanding Youth Scientist Foundation of Hunan Province, Jilin Scientific and Technological Development Program
Openalex Percentile: Top 19%
Ga2O3 and related materials
1.28
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