Tunneling Field Effect Transistors Based on Janus Monolayer PtSSe

This work explores the electronic transport properties of a double-gated tunneling field effect transistor (TFET) based on Janus monolayer PtSSe. Janus PtSSe, with its unique asymmetrical structure and inherent built-in electric polarization, offers exceptional electronic properties such as a tunable bandgap and high carrier mobility, making it a promising candidate for next-generation electronic devices. Using density functional theory (DFT) and non-equilibrium Green’s function (NEGF) calculations, the performance of the PtSSe-based TFET is evaluated, demonstrating a low subthreshold swing as low as 19 mV/dec and an I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub>/I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ratio as high as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$1.64 \times 10^{8}$</tex-math></inline-formula>, and a maximum operating frequency of 0.88 THz depending achieved through optimization of doping concentration. The study also investigates the impact of spin-orbit coupling on the material’s electronic properties, offering insights for further optimization. These findings establish Janus PtSSe as a promising material for addressing the limitations of conventional silicon-based FETs and advancing nanoscale electronics by enabling high-performance, low-power devices.