High efficiency High Output Power and Wideband GaN HEMT Power Amplifier over entire S-Band

This work proposes a high Output Power, high efficiency and wideband GaN HEMT power amplifier (PA) in S-band frequency for high efficiency and wideband applications. The design methodology employs a U-shaped Matching network (UMN) at input and output to suppress harmonics impedances which improves the $\mathbf{i} / \mathbf{o}$ power, efficiency, and bandwidth over S-band with minimal power consumption The work employs, a Class AB Power Amplifier integrated with the proposed UMN is designed using $0.15 \mu \mathrm{~m}$ GaN HEMT. The simulated results proves that the proposed design achieves a high power added efficiency (PAE) of $49 \%$ - $68 \%$, output power, Pout, of $39 \mathrm{dBm}-44.5 \mathrm{dBm}$, drain efficiency (DE) of $54 \%-80 \%$, and a nearly flat gain small-signal gain of 13.8 dB over a frequency of $2 \mathrm{GHz}-4 \mathrm{GHz}$.