A 5.06/°C,-81.5 dB-PSRR, 4.85 μ A Bandgap Reference with Curvature Correction in 55nm CMOS

This paper presents a low power and high precision Bandgap Reference (BR) for battery-operated audio applications. Thanks to a robust start-up circuit and a current mode structure, it can operate across a wide range of supply voltages (V D D ∈ [1.04 V, 2 V]). Moreover, a curvature correction circuit (CC) is designed to deliver the desires performance levels while maintaining a total current consumption of Itot=4.85 μ A. Indeed, it allows to reduce the output temperature drift otherwise reached at cost of higher Itot or bigger silicon footprint. The proposed BR was implemented in 55 nm CMOS and measurements results show a 5.06 ppm/ °C Temperature Coefficient (TC), a 0.014% /V line regulation, a -80.51 dB and -60.45 dB Power Supply Rejection Ratio (PSRR) at 20 Hz and 1 kHz respectively.

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Publication Details

Journal
BOA (University of Milano-Bicocca)
Published
2025-01-01
DOI
https://doi.org/10.1109/icicdt65192.2025.11078104
Primary Topic
Analog and Mixed-Signal Circuit Design
Type
article
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article

A 5.06/°C,-81.5 dB-PSRR, 4.85 μ A Bandgap Reference with Curvature Correction in 55nm CMOS

Richard Gaggl, A. Basçhirotto, Luca Sant, Francesco Spreafico
BOA (University of Milano-Bicocca)
Analog and Mixed-Signal Circuit Design
article

A 5.06/°C,-81.5 dB-PSRR, 4.85 μ A Bandgap Reference with Curvature Correction in 55nm CMOS

Richard Gaggl, A. Basçhirotto, Luca Sant, Francesco Spreafico
article en

Abstract

This paper presents a low power and high precision Bandgap Reference (BR) for battery-operated audio applications. Thanks to a robust start-up circuit and a current mode structure, it can operate across a wide range of supply voltages (V D D ∈ [1.04 V, 2 V]). Moreover, a curvature correction circuit (CC) is designed to deliver the desires performance levels while maintaining a total current consumption of Itot=4.85 μ A. Indeed, it allows to reduce the output temperature drift otherwise reached at cost of higher Itot or bigger silicon footprint. The proposed BR was implemented in 55 nm CMOS and measurements results show a 5.06 ppm/ °C Temperature Coefficient (TC), a 0.014% /V line regulation, a -80.51 dB and -60.45 dB Power Supply Rejection Ratio (PSRR) at 20 Hz and 1 kHz respectively.

BOA (University of Milano-Bicocca)
Infineon Technologies (Austria) (AT), University of Milano-Bicocca (IT)
Openalex Percentile: Top 81%
Analog and Mixed-Signal Circuit Design
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A 5.06/°C,-81.5 dB-PSRR, 4.85 μ A Bandgap Reference with Curvature Correction in 55nm CMOS — Richard Gaggl, A. Basçhirotto, et al. · BOA (University of Milano-Bicocca) (2025) | TGRS Research Map | TGRS