Large signal GaN HEMT Model up to Ku Band for Switch Applications

In this paper, the non linear model of RF switch based on measurement data of indigenous fabricated devices up to Ku Band is presented. The GaN switch devices are fabricated with $0.25 \mu \mathrm{~m}$ Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) technology on a $100 \mu \mathrm{~m}$ SiC substrate. The model includes the determination of various parameters like insertion loss, return loss, isolation, maximum output power, saturated power and 1 dB compression point. These parameters are extracted and validated with the measurement results. Good agreement between the modeled and measured parameters has been achieved up to Ku band. Using this large signal model, maximum power handling has been estimated which is approximately 39 dBm for 0.6 mm device.