Enhanced Ferroelectricity in $\text{Hf}_{0.5} \text{Zr}_{0.5} \mathrm{O}_{2}$ Thin Films by NLA at Intermediate Laser Energy Density

Ferroelectric devices are highly promising for the integration of non-volatile memories, particularly in ultra-lowpower edge-AI applications. However, the scaling of back end of line-compatible hafnium zirconium oxide (HZO) films is constrained by the increased crystallization temperature required for ultrathin films and the limitations of the thermal budget. In this study, nanosecond laser annealing (NLA) is investigated as an alternative approach to enhance HZO performance. The influence of NLA energy density and pulse count on the crystallization and electrical properties of thin HZO films is examined. Ferroelectricity is successfully induced in 10 nm and 12 nm films. Enhanced remanent polarization (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2 \mathrm{P}_{\mathrm{r}}$</tex>) values are observed at intermediate laser energy densities, with the best balance between high <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2 \mathrm{P}_{\mathrm{r}}$</tex>, minimal wake-up effects, and low leakage current achieved at an energy density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$0.50 ~\mathrm{J} / \text{cm}^{2}$</tex> and 100 pulses.