Memristive Model of a Sb₂Se₃ Solar Cell

Memristors, first theorized in 1971 and experimentally confirmed in 2009, have attracted substantial research interest due to their unique characteristics. They are particularly significant in applications like neuromorphic computing and memory storage. However, memristive behavior is not always an isolated phenomenon; it can also emerge as a parasitic effect in various electronic devices. Despite this, parasitic memristive effects have received comparatively less attention than traditional circuit components like resistors and capacitors. In this work, we present a model for a device with a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Mo} / \text{MoSe}_{2} / \text{Sb}_{2} \text{Se}_{3}(10 \text{nm}) / \text{CdS}(2 \text{nm}) /$</tex> ITO structure, originally designed as a solar cell, which exhibits memristive behavior. This behavior is analyzed using a slow triangular waveform. Our proposed model extends the conventional single-diode solar cell model by incorporating observed memristive effects as second-order, parasitic elements. Experimental results demonstrate strong agreement with the proposed model, confirming the presence of memristive behavior in the system.