Analysis of Resistive Switching Performance of ZnO/PVA Bilayer Memristive Device for Neuromorphic Applications

The development and analysis of a resistive switching device with an Ag/PVA/ZnO/ITO architecture for memory applications are examined in this article. Utilizing the complementary advantages of metal oxides and organic polymers, the device incorporates a bilayer of zinc oxide (ZnO) and polyvinyl alcohol (PVA) as the active switching medium to improve device performance. The PVA/ZnO bilayer simulates synaptic activity, with the Ag electrode Configured as the upper electrode while the ITO electrode is the underlying electrode. Bipolar analog resistive switching (ARS), which is typified by slow resistance changes that mimic potentiation and depression in biological synapses, is confirmed by current-voltage (I-V) analysis. Ion migration and the creation and breaking of conductive filaments inside the bilayer are the causes of these characteristics. The results advance our knowledge of the device’s switching mechanisms and synaptic emulation capabilities while highlighting its potential for low-power, scalable neuromorphic systems.