A single-phase epitaxially grown ferroelectric perovskite nitride
The integration of ferroelectrics with semiconductors is crucial for developing functional devices, such as field-effect transistors, tunnel junctions, and nonvolatile memories. However, the synthesis of high-quality single-crystalline ferroelectric nitride perovskites has been limited, hindering a comprehensive understanding of their switching dynamics. Here we report the synthesis and characterizations of epitaxial single-phase ferroelectric cerium tantalum nitride (CeTaN<sub>3</sub>) on both oxides and semiconductors. The polar symmetry of CeTaN<sub>3</sub> was confirmed by observing the atomic displacement of central ions relative to the center of the TaN<sub>6</sub> octahedra, as well as through optical second harmonic generation. We observed switchable ferroelectric domains using piezoresponse force microscopy, complemented by the characterization of square-like polarization-electric field hysteresis loops. The remanent polarization of CeTaN<sub>3</sub> reaches approximately 20 microcoulomb per square centimeter at room temperature, consistent with theoretical calculations. This work establishes a vital link between ferroelectric nitride perovskites and their practical applications, paving the way for next-generation information and energy storage devices.
Authors
- Jiawang Hong (ORCID: https://orcid.org/0000-0002-9915-8072)
- Wei Li (ORCID: https://orcid.org/0000-0002-8153-0534)
- Kuijuan Jin (ORCID: https://orcid.org/0000-0002-0047-4375)
- Lin Gu (ORCID: https://orcid.org/0000-0002-7504-031X)
- Xian Zi (ORCID: https://orcid.org/0009-0001-9728-8084)
- Gang Tang (ORCID: https://orcid.org/0000-0003-4665-8599)
- Shanmin Wang (ORCID: https://orcid.org/0000-0001-7273-2786)
- Er‐Jia Guo (ORCID: https://orcid.org/0000-0001-5702-225X)
- Qiao Jin (ORCID: https://orcid.org/0000-0002-8655-704X)
- Shuai Xu (ORCID: https://orcid.org/0000-0002-3078-2061)
- Jie Fang (ORCID: https://orcid.org/0000-0003-4724-0215)
- Songhee Choi
- Dongke Rong (ORCID: https://orcid.org/0000-0001-8368-8346)
- Shengru Chen (ORCID: https://orcid.org/0000-0002-7656-2427)
- Qinghua Zhang (ORCID: https://orcid.org/0000-0001-9086-7000)
- Qian Li (ORCID: https://orcid.org/0000-0001-7922-598X)
- Chen Ge (ORCID: https://orcid.org/0000-0002-8093-940X)
- Can Wang (ORCID: https://orcid.org/0000-0002-4404-7957)
- Ting Cui (ORCID: https://orcid.org/0000-0002-1436-7474)
- Lingfei Wang (ORCID: https://orcid.org/0000-0003-1675-0941)
- Zhiguo Chen (ORCID: https://orcid.org/0000-0002-8242-4784)
- Jinfeng Zhang (ORCID: https://orcid.org/0009-0007-9234-6154)
- Haitao Hong
- Qianying Wang
Institutions
- Beijing Institute of Technology (CN)
- University of Science and Technology of China (CN)
- Chinese Academy of Sciences (CN)
- Southern University of Science and Technology (CN)
- Shenzhen Bay Laboratory (CN)
- Hefei National Center for Physical Sciences at Nanoscale (CN)
- Institute of Physics (CN)
- University of Chinese Academy of Sciences (CN)
- Zhuhai Institute of Advanced Technology (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Science Advances
- Published
- 2025-08-08
- DOI
- https://doi.org/10.1126/sciadv.adu6698
- Citations
- 4
- Primary Topic
- Ferroelectric and Piezoelectric Materials
- Type
- article
- Field-Weighted Citation Impact
- 2.07