Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier

A low sheet resistance of 95.5 Ω/□ at room temperature has been demonstrated in an MBE-grown Sc0.15Al0.85N/AlN/GaN epitaxial HEMT structure. Owing to the strong spontaneous and piezoelectric polarization of ScAlN, a large two-dimensional electron gas density of 7.8 × 1013 cm−2 and a relatively high mobility of 836 cm2/V·s were demonstrated with a 15 nm Sc0.15Al0.85N barrier. Further investigation under low temperature on this structure reveals a reduced sheet resistance to 33.3 Ω/□ and mobility increased to 4223 cm2/V·s at 10 K. The dependence of sheet carrier density, mobility, and the associated sheet resistance on ScAlN thickness was further studied. The compelling electron transport properties demonstrated in the structure position ScAlN as a strong contender as the barrier layer in future GaN HEMT devices.

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Publication Details

Journal
Applied Physics Letters
Published
2025-08-04
DOI
https://doi.org/10.1063/5.0266966
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier

Shubham Mondal, Jie Zhang, Patrick Kezer, John T. Heron et al.
1 links
Applied Physics Letters
GaN-based semiconductor devices and materials
article

Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier

Shubham Mondal, Jie Zhang, Patrick Kezer, John T. Heron, Md Mehedi Hasan Tanim, Kai Sun, Danhao Wang, Zetian Mi, Ding Wang, Jiangnan Liu, Md. Tanvir Hasan
article en

Abstract

A low sheet resistance of 95.5 Ω/□ at room temperature has been demonstrated in an MBE-grown Sc0.15Al0.85N/AlN/GaN epitaxial HEMT structure. Owing to the strong spontaneous and piezoelectric polarization of ScAlN, a large two-dimensional electron gas density of 7.8 × 1013 cm−2 and a relatively high mobility of 836 cm2/V·s were demonstrated with a 15 nm Sc0.15Al0.85N barrier. Further investigation under low temperature on this structure reveals a reduced sheet resistance to 33.3 Ω/□ and mobility increased to 4223 cm2/V·s at 10 K. The dependence of sheet carrier density, mobility, and the associated sheet resistance on ScAlN thickness was further studied. The compelling electron transport properties demonstrated in the structure position ScAlN as a strong contender as the barrier layer in future GaN HEMT devices.

Applied Physics LettersVol. 127(5)
University of Michigan (US)
Army Research Office
Openalex Percentile: Top 88%
GaN-based semiconductor devices and materials
DOISourceOpenAlex
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Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier — Shubham Mondal, Jie Zhang, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS