385 nm AlGaN Near-Ultraviolet Micro Light-Emitting Diode Arrays with WPE 30.18% Realized Using an AlN-Inserted Hole Spreading Enhancement S Electron Blocking Layer

In this work, we demonstrate high-efficiency 385 nm AlGaN-based near-ultraviolet micro light emitting diode (NUV-Micro LED) arrays. The epi structure is prepared using a novel AlN-inserted superlattice electrical blocking layer which enhances hole spreading in the p-type region significantly. The NUV-Micro LED arrays in this work comprise 228 chips in parallel with wavelengths at 385 nm, and each single chip size is 15 × 30 μm2. Compared with conventional bulk AlGaN-based EBL structures, the NUV-Micro LED arrays that implemented the new hole spreading enhanced superlattice electrical blocking layer (HSESL-EBL) structure proposed in this work had a remarkable increase in light output power (LOP) at current density, increasing the range down from 0.02 A/cm2 to as high as 97 A/cm2. The array’s light output power is increased up to 1540% at the lowest current density 0.02 A/cm2, and up to 58% at the highest current density 97 A/cm2, measured under room temperature (RT); consequently, the WPE is increased from 13.4% to a maximum of 30.18%. This AlN-inserted HESEL-EBL design significantly enhances both the lateral expansion efficiency and the hole injection efficiency into the multi quantum well (MQW) in the arrays, improving the concentration distribution of the holes in MQW while maintaining good suppression of electron leakage. The array’s efficiency droop has also been greatly reduced.