Multilevel Switching in Memristive Structures Based on Oxidized Lead Selenide
Using oxidized lead selenide as an interface, Ag/PbSeOx/PbSe heterostructures exhibiting stable memristive properties are fabricated. In order to obtain metastable multilevel states on these structures, studies are carried out using different protocols for supplying pulse signals. By adjusting the number, amplitude, duration, and duty cycle of pulses, 13 metastable resistive states are realized. The studied memristor remains stable and reproducible over a period of several months.
Authors
- N. A. Tulina (ORCID: https://orcid.org/0000-0002-5540-5211)
- I. M. Shmytko
- N. N. Kolesnikov (ORCID: https://orcid.org/0000-0001-8958-6172)
- A. N. Rossolenko
- I. Yu. Borisenko
- D. N. Borisenko (ORCID: https://orcid.org/0000-0001-7906-862X)
Institutions
- Osipyan Institute of Solid State Physics RAS (RU)
- Institute of Microelectronics Technology and High Purity Materials (RU)
Publication Details
- Journal
- Russian Microelectronics
- Published
- 2025-04-01
- DOI
- https://doi.org/10.1134/s1063739725600293
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00