Electrical Characteristics of Ruthenium Tracks with a Cross-Sectional Area Less Than 1000 nm2

As the IC scales, wires narrower than 20 nm at the lower levels of the metallization system need to be formed according to the scaling of ICs. At these dimensions, copper no longer meets the requirements for RC delays and resistance to electromigration. Therefore, it is necessary to look for alternative materials to replace copper that will provide higher resistance to electromigration and lower track resistance. The most promising candidate is Ru. In this study, test structures with ruthenium tracks are obtained. For this purpose, methods for creating structures such as plasma-enhanced vapor deposition, plasma-enhanced atomic layer deposition, magnetron sputtering, electron beam lithography, and plasma-chemical etching are used. Spectroscopic ellipsometry and scanning electron microscopy are used to control the stages of creation and studying the resulting structures. The electrical characteristics of the structures are measured and analyzed.