Loss Analysis of T-Type Three-Level Inverter Based on SiC/GaN Device

A hybrid T-type three-level converter based on GaN/SiC MOSFETs is proposed to enhance the efficiency of high-power, high-switching frequency three-phase T-type three-level converter. The operating mode and power loss during the conversion process are simulated and analyzed in a basic period. A loss model is constructed by analyzing the operating loss of SiC and GaN MOSFETs, enabling calculation of the operating efficiency and loss distribution of the topology, as well as selection of the most suitable inverter switching frequency. MATLAB and LTspice simulations are used to analyze and compare the switching device loss and system efficiency of three T-type three-level topologies, confirming that the proposed hybrid topology exhibits excellent characteristics in terms of switching behavior and system efficiency.