Design of Radiation-Hardened Schmitt Trigger

As feature sizes of integrated circuits continue to decrease, space radiation has become an important factor affecting the reliability of electronic components. In this paper, we use the standard commercial 0.5-μm CMOS process to design a radiation-hardened Schmitt trigger. Using a gate-all-around transistor and isolation guard ring structure, the chip area is only 1.4 mm × 1.0 mm in the integrated circuit of a hex Schmitt trigger. Simulation analysis and experimental testing show that the static power consumption and input leakage current of the chip are both less than 100 nA, the total dose that the circuit withstands without failure is greater than 100 krad (Si), and the single-event linear energy transfer (LET) is greater than 82 MeV·cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>/mg. These parameters fully meet the space environment application requirements of electronic components.