High-Efficiency Reverse-Conducting IGBT with Snapback-Free and Low Conduction Loss

In advanced Reverse-Conducting Insulated Gate Bipolar Transistors (RCIGBTs), achieving low on-state voltage drop <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{ce(sat)})$</tex> and integrated diode forward voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</inf>) are imperative for minimizing conduction losses. While enlarging the integrated diode in RCIGBT can reduce the V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</inf> during reverse conduction, this approach exacerbates snapback effect and degrades forward conduction performance due to inherent trade-off between these parameters. In this paper, we optimize the integrated diode-to-IGBT area ratio and implement a contact implantation near the p-body region. Experimental results demonstrate a 35% improvement in V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">F</inf> without compromising the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{ce(sat)}$</tex>. Moreover, the contact resistance within the silicon-electrode interface is significantly reduced, enhancing the device performance.