Design of a High-Reliability STT-MRAM Read Circuit Based on 40nm Process

With the continuous miniaturization and increasing speed of electronic devices, spin-transfer torque magnetic random access memory (STT-MRAM) has emerged as a strong competitor for next-generation embedded memory due to its non-volatility, high speed, and low power consumption. However, in practical applications, the reliability of STT-MRAM still faces many challenges, such as a narrow read margin, high write current requirements, and read disturbance issues. This paper presents an optimized design of the read circuit to address the narrow read margin and read disturbance problems. Experimental results demonstrate that the optimized design can maintain stable read operations under various temperature and process variation conditions, effectively enhancing the read margin and reliability of STT-MRAM, and providing new technical support for the development of next-generation embedded memory.