Design of a Wide-Temperature and Low-Current Mismatch Charge Pump for Phase Locked Loop

This paper presents a novel wide-temperature and low-current mismatch charge pump circuit for modern communication systems requiring high-performance phase locked loop (PLL). When applied in a CMOS PLL, the proposed charge pump effectively suppresses phase error induced by non-idealities in the charge pump, thereby enhancing the overall PLL performance. The design employs a bias circuit to generate a temperature-independent charge pump current, effectively reducing phase error fluc-tuations caused by temperature variations. The core circuit of the charge pump incorporates transmission gates and an operational amplifier to achieve excellent current matching characteristics. Fabricated using a 180 nm CMOS process. Simulation results show that over a temperature range from -40°C to 175 °C, the output current variation remains within 49.86 μA to 50.16 μA, with a temperature coefficient of31 ppm/°C. Compared with conventional push-pull input charge pumps, the proposed design significantly extends the output voltage range under 0.01% current mismatch from 0.32 V to 2.4 V, achieving a 24.24% improvement.

Authors

Institutions

Publication Details

Published
2025-07-11
DOI
https://doi.org/10.1109/eicct65471.2025.11099760
Primary Topic
Electrostatic Discharge in Electronics
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Design of a Wide-Temperature and Low-Current Mismatch Charge Pump for Phase Locked Loop

Ning Fu, Xuedan Wang, Xuesong Chen, Weifeng Li et al.
Electrostatic Discharge in Electronics
article

Design of a Wide-Temperature and Low-Current Mismatch Charge Pump for Phase Locked Loop

Ning Fu, Xuedan Wang, Xuesong Chen, Weifeng Li, Chao-Yang He, Yu Jin
article en

Abstract

This paper presents a novel wide-temperature and low-current mismatch charge pump circuit for modern communication systems requiring high-performance phase locked loop (PLL). When applied in a CMOS PLL, the proposed charge pump effectively suppresses phase error induced by non-idealities in the charge pump, thereby enhancing the overall PLL performance. The design employs a bias circuit to generate a temperature-independent charge pump current, effectively reducing phase error fluc-tuations caused by temperature variations. The core circuit of the charge pump incorporates transmission gates and an operational amplifier to achieve excellent current matching characteristics. Fabricated using a 180 nm CMOS process. Simulation results show that over a temperature range from -40°C to 175 °C, the output current variation remains within 49.86 μA to 50.16 μA, with a temperature coefficient of31 ppm/°C. Compared with conventional push-pull input charge pumps, the proposed design significantly extends the output voltage range under 0.01% current mismatch from 0.32 V to 2.4 V, achieving a 24.24% improvement.

North China Electric Power University (CN), Beijing University of Chemical Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 82%
Electrostatic Discharge in Electronics
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.