Verification of the Consistency of Thermal Resistance Measurement of Heat Source-Temperature Measurement Separated Chips

Third-generation semiconductor devices are characterised by high power densities, which give rise to interface thermal resistance problems. The measurement of thermal boundary resistance has become a more focused and challenging endeavour. In this study, an integrated test chip developed for the measurement of interfacial thermal resistance was optimised with the aim of improving its temperature coefficient and significantly reducing its on-resistance. Accordingly, the interfacial thermal resistance between GaN/Si was measured once more. The measured data are to a certain extent in agreement with the results of the previous chip, which demonstrates that the method is both stable and feasible.