The Performance Enhancement of Vertical Organic Transistors with Mesh Electrodes

This paper investigates three different device structures of vertical organic field-effect transistor (VOFET). Different device's electrical characteristics were simulated using the Silvaco TCAD simulation tool, and study the impact of different injection barriers on the devices. With the increase of the injection barrier, the output current of all three devices achieved better saturation characteristics. This paper study the influence of adding a shielding layer on the output characteristics under different buried organic semiconductor thicknesses. Furthermore, this paper employs high-k material HfO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> as the gate insulator and a bilayer metal source electrode. The high-k material can reduce gate leakage current to obtain better performance. By comparing the three different VOFET structures, this paper significantly enhances the device performance, particularly in achieving a high current on/off ratio (up to 1020) and good output current saturation.