Automated Charge Transition Detection in Quantum Dot Charge Stability Diagrams

Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges. Therefore, to fully automate qubit tuning, it is necessary to recognize these edges automatically and reliably. This paper investigates possible detection methods, describes their training with simulated data from the SimCATS framework, and performs a quantitative comparison with a future hardware implementation in mind. Furthermore, we investigated the quality of the optimized approaches on experimentally measured data from a GaAs and a SiGe qubit sample.

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Publication Details

Journal
IEEE Transactions on Quantum Engineering
Published
2025-01-01
DOI
https://doi.org/10.1109/tqe.2025.3596392
Citations
2
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
Field-Weighted Citation Impact
1.46
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article

Automated Charge Transition Detection in Quantum Dot Charge Stability Diagrams

Sarah Fleitmann, Lotte Geck, Stefan van Waasen, Fabian Fuchs et al.
2 citations
IEEE Transactions on Quantum Engineering
Integrated Circuits and Semiconductor Failure Analysis
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article

Automated Charge Transition Detection in Quantum Dot Charge Stability Diagrams

Sarah Fleitmann, Lotte Geck, Stefan van Waasen, Fabian Fuchs, Jan Vogelbruch, Fabian Hader, Benedikt Scherer, Karin Havemann
article en
2 citations

Abstract

Gate-defined semiconductor quantum dots require an appropriate number of electrons to function as qubits. The number of electrons is usually tuned by analyzing charge stability diagrams, in which charge transitions manifest as edges. Therefore, to fully automate qubit tuning, it is necessary to recognize these edges automatically and reliably. This paper investigates possible detection methods, describes their training with simulated data from the SimCATS framework, and performs a quantitative comparison with a future hardware implementation in mind. Furthermore, we investigated the quality of the optimized approaches on experimentally measured data from a GaAs and a SiGe qubit sample.

IEEE Transactions on Quantum EngineeringVol. 6
X-Fab (Germany) (DE)
Affordable and clean energy
Openalex Percentile: Top 16%
Integrated Circuits and Semiconductor Failure Analysis
1.46
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Automated Charge Transition Detection in Quantum Dot Charge Stability Diagrams — Sarah Fleitmann, Lotte Geck, et al. · IEEE Transactions on Quantum Engineering (2025) | TGRS Research Map | TGRS