Flexible and Reliable Parylene‐C Resistive Random Access Memory Array with Graphene Barrier for Neuromorphic Systems

Resistive Random Access Memories The cover image illustrates a flexible parylene-C-based resistive random access memory (RRAM) array incorporating a graphene diffusion barrier. The graphene layer suppresses excessive metal ion diffusion, thereby controlling the growth of conductive filaments. Artificial neural network simulations further demonstrate the feasibility of these devices for neuromorphic computing applications. More details can be found in article number 2500056 by Dong-Wook Park, Yoon Kim, and co-workers.