Comparison of resistivity distribution in p-type and n-type SiC single crystals grown by the PVT method

Authors

Yuanchao Huang (ORCID: https://orcid.org/0000-0001-9992-0955)
Zhouyu Tong (ORCID: https://orcid.org/0000-0002-4464-2529)
Lingling Xuan (ORCID: https://orcid.org/0000-0002-8141-7988)
Xuefeng Han (ORCID: https://orcid.org/0000-0002-9309-0038)
Xiaodong Pi (ORCID: https://orcid.org/0000-0002-4233-6181)
Sheng'ou Lu (ORCID: https://orcid.org/0009-0003-6469-833X)
Deren Yang (ORCID: https://orcid.org/0000-0002-1745-2105)
Can Cui (ORCID: https://orcid.org/0000-0003-4452-823X)
Tianqi Deng (ORCID: https://orcid.org/0000-0002-9826-7138)
Anqi Wang (ORCID: https://orcid.org/0000-0003-1378-0379)