Observation of Atomic-Scale Structural Changes in Al<sub>2</sub>O<sub>3</sub>/GaN Interfacial Layers Prepared with a Dummy-SiO<sub>2</sub> Process
We previously reported that a dummy-SiO 2 process improved the dielectric/GaN interface properties [Y. Irokawa et al., ECS J. Solid State Sci. Technol. 13 , 085003 (2024)]; however, the improvement mechanism has remained unclear. In this study, the atomic-scale structural changes at Al 2 O 3 /GaN interfaces prepared with the dummy-SiO 2 process are investigated through aberration-corrected scanning transmission electron microscopy with energy-dispersive X-ray spectroscopy. The results reveal that disordered GaN(O) polarity in the interfacial layer in a sample prepared by the standard process was restored to some extent after the dummy-SiO 2 process, which likely led to the improved interface electrical properties.
Authors
- Jun Uzuhashi (ORCID: https://orcid.org/0000-0003-2023-8158)
- Yoshihiro Irokawa (ORCID: https://orcid.org/0000-0002-6531-4356)
- Tadakatsu Ohkubo (ORCID: https://orcid.org/0000-0003-3548-1951)
- Toshihide Nabatame (ORCID: https://orcid.org/0000-0002-5973-0230)
- Yasuo Koide (ORCID: https://orcid.org/0000-0001-8321-9822)
Publication Details
- Journal
- ECS Journal of Solid State Science and Technology
- Published
- 2025-08-01
- DOI
- https://doi.org/10.1149/2162-8777/adf3e3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education, Culture, Sports, Science and Technology