A Comparative Study of Power Stage Layouts for Three-Level ANPC Inverters with Half-Bridge SiC Power Modules
The three-level active neutral point clamped (ANPC) inverter, utilizing wide bandgap switching devices such as silicon carbide (SiC), is emerging as a promising alternative to traditional two-level inverters for electrified transportation applications, including electric vehicles and aircraft. The implementation of high-power three-level ANPCs typically requires multiple half-bridge power modules to achieve high current ratings. Based on practical design experience, this paper analyzes and compares two different power stage layouts of three-level ANPCs with half-bridge SiC modules. The study evaluates the performance metrics of the two layouts, including commutation loop inductance, efficiency, and thermal performance. Both simulation and experimental results demonstrate the advantages of each proposed layout in different aspects.
Authors
- Giorgio Pietrini (ORCID: https://orcid.org/0000-0003-1223-7657)
- Di Wang (ORCID: https://orcid.org/0000-0003-1695-2770)
- Linke Zhou (ORCID: https://orcid.org/0009-0001-9933-4312)
- Jiaming An
- Piranavan Suntharalingam
- Ali Emadi (ORCID: https://orcid.org/0000-0002-0676-1455)
- Armen Baronian
- Yulei Wang (ORCID: https://orcid.org/0009-0005-9908-4367)
- Sam Hemming
Institutions
- Eaton (United States) (US)
- McMaster University (CA)
Publication Details
- Published
- 2025-06-18
- DOI
- https://doi.org/10.1109/itec63604.2025.11097955
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00