Research on Contact Pressure Modeling Method for PP-IGBT Based on Ultrasonic Technology
In this paper, a modeling method for contact pressure measurement of press-pack insulated gate bipolar transistor (PP-IGBT) devices based on ultrasonic technology is proposed. Firstly, the two-dimensional ultrasonic finite element model of PP-IGBT device is established based on the package material size, and the accuracy is verified by the comparison of ultrasonic propagation distance and actual material thickness, which the error is less than 1.25%. Secondly, the rough surface of the material of actual PP-IGBT device is simulated by random curves in 2D model, and the ultrasonic response of contact interface under different pressure is studied by using equivalent displacement of contact surface. Finally, the simulation results are verified by pressure experiments of a single chip PP-IGBT. The results show that the maximum error between simulation and experimental results is about 4.35%, and ultrasonic reflection amplitude decreasing with the increase of contact pressure is verified.
Authors
- Ran Yao (ORCID: https://orcid.org/0000-0001-5201-9131)
- Yirun Ji (ORCID: https://orcid.org/0000-0002-7153-5104)
- Hui Li (ORCID: https://orcid.org/0000-0002-6890-2583)
- Qing Huai (ORCID: https://orcid.org/0000-0001-7819-1175)
- Zeyu Duan (ORCID: https://orcid.org/0000-0003-4375-4016)
- Wei Lai (ORCID: https://orcid.org/0000-0001-8418-3964)
- Minxiang Yang
- Wenqian Yuan
- Xi Yuan (ORCID: https://orcid.org/0000-0001-8731-216X)
- Peng Yang (ORCID: https://orcid.org/0000-0003-0785-7720)
Institutions
- Chongqing University (CN)
- State Grid Corporation of China (China) (CN)
Publication Details
- Published
- 2025-05-23
- DOI
- https://doi.org/10.1109/ieecsc64206.2025.11099879
- Primary Topic
- Mechanical stress and fatigue analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00